(Au, Ag)/Al0.08In0.08Ga0.84N/ (Au, Ag) Metal-semiconductor-metal (MSM) Photodetectors

  • Alaa Ghazai Al-Nahrain University, Science College, Physics Departement
  • Marwaa Mohammed Physics Department, Science College, Al-Nahrain University, Iraq
Keywords: Single-Metal-semiconductor-meta, Photodetectors, Al0.08In0.08Ga0.84N, PA-MBE, SBH, QE, NEP


Metal-semiconductor-metal (MSM) photodetectors (PDs) based on gold and silver (Au, Ag)/Al0.08In0.08Ga0.84N (commercial sample)/ (Au, Ag) have been fabricated and characterized.   The effect of annealing temperature of As deposit, 400, 500, and 600 0C for 30 min on the topography and electrical properties of   Au contact on Al0.08In0.08Ga0.84N thin film have been characterized and optimized using Current-Voltage (I-V) characteristic. Schottky barrier height (SBH) and ideality factor (n) of Au/ Al0.08In0.08Ga0.84N interface were 1.223 eV and 1.773 at 50 0C annealing temperature for 30 min respectively, and it is found that contact has a high-quality surface. Also, with the same procedure, the effect of annealing time of 15, 30, 45 minutes, and 1 hour have been studied and optimized. The results revealed that the best annealing time is 30 min which has the highest SBH. Au contact compared with Ag contact used to first time as best our knowledge with the optimal condition to select the best metal for MSM photodetectors (PDs). The ideal characterization of Au, Ag/AlInGaN/Au, Ag MSMPDs on Si substrate depend on responsivities of 0.201 and 0.153 A W-1, quantum efficiencies of 71% and 57%, and NEPs of 3.55×10-4 and 1.45×10-3W-1, respectively have been also studied compared. The height SBH and QE for the samples grown on Si was at Au contact which proposed to use in such optoelectronic devices.