Nano-scale Investigation for Optical XOR and XNOR Logic Gates at 1.55 μm

  • Saif Al-Tameemi Imam Ja'afar Al-Sadiq University
  • Salam A. W. Al-abassi
  • Hasanian Al-Hakkak
  • Mohsen Hayati
Keywords: Insulator-Metal-Insulator;, Optical Logic Gates, Nanophotonics


In this article, nano-rings Insulator-Metal-Insulator (IMI) plasmonic waveguides are used to propose, simulate, design, and construct all-optical (XOR and XNOR) logic gates. The Finite Element Method (FEM) has been used to develop and numerically simulate the proposed two-dimensional (2-D) structure of plasmonic gates. Four metrics are used to assess the performance of the proposed device: insertion loss, modulation depth (MD), transmission, and extension ratio (ER). Glass and silver were used to build the suggested building. Destructive and constructive interferences were used to create the functioning of the proposed plasmonic gates. According to numerical simulations, the proposed plasmonic gates with a transmission threshold of (0.3) could be realized in a single structure operating at1.55 μm. The characteristics of this device were as follows: medium Extension Ratio values, high MD values, transmission above 200% in a single state of XNOR gate. This technology is also considered essential to all-optical computers and opening the door to future access to nanophotonic integrated circuits.

How to Cite
Al-Tameemi, S., Al-abassi, S. A. W., Al-Hakkak , H., & Hayati, M. (2024). Nano-scale Investigation for Optical XOR and XNOR Logic Gates at 1.55 μm. Iraqi Journal of Natural Sciences and Nanotechnology, 5(1), 103-114.